Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy
Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy
复制标题
DOI:
10.1038/s41563-020-0631-x
复制
发表时间:
2020-03-10
期刊:
影响因子:
41.2
通讯作者:
Robinson, Joshua A.
中科院分区:
文献类型:
--
作者:
Briggs, Natalie;Bersch, Brian;Robinson, Joshua A.
Atomically thin two-dimensional (2D) metals may be key ingredients in next-generation quantum and optoelectronic devices. However, 2D metals must be stabilized against environmental degradation and integrated into heterostructure devices at the wafer scale. The high-energy interface between silicon carbide and epitaxial graphene provides an intriguing framework for stabilizing a diverse range of 2D metals. Here we demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are 'half van der Waals' metals with strong internal gradients in bonding character. These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties. For example, the reported 2D Ga is a superconductor that combines six strongly coupled Ga-derived electron pockets with a large nearly free-electron Fermi surface that closely approaches the Dirac points of the graphene overlayer.Single-crystal 2D metals are stabilized at the interface between epitaxial graphene and silicon carbide, with strong internal gradients in bonding character. The confined 2D metals demonstrate compelling superconducting properties.