X-ray Diffraction Study on Pressure-Induced Phase Transformation in Nanocrystalline GaAs
X-ray Diffraction Study on Pressure-Induced Phase Transformation in Nanocrystalline GaAs
复制标题
纳米晶 GaAs 压力诱导相变的 X 射线衍射研究
DOI：
10.1080/08957950212806
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发表时间：
2002
影响因子：
2
通讯作者：
S. Steenstrup
中科院分区：
文献类型：
--
作者：
J. Jiang;J. Olsen;L. Gerward;S. Steenstrup
我们已经证明，对于体相和纳米相材料，GaAs I M II转变的起始和转变压力分别为17 GPa和20 GPa。由Gleiter建立的双组分模型解释了纳米相砷化镓在半导体到金属转变时电阻率的逐渐变化。
We have shown that the onset and transition pressures of the GaAs I M II transition are 17 GPa and 20 GPa, respectively, for both bulk and nanophase material. The observed gradual change in resistivity of nanophase GaAs at the semiconductor-to-metal transition is explained by the two-component model developed by Gleiter.