Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering
Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering
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DOI：
10.1063/1.4789868
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发表时间：
2013-01
影响因子：
4
通讯作者：
Y. Kong;Jianjun Zhou;C. Kong;Xun Dong;Youtao Zhang;Haiyan Lu;Tangsheng Chen
中科院分区：
文献类型：
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作者：
Y. Kong;Jianjun Zhou;C. Kong;Xun Dong;Youtao Zhang;Haiyan Lu;Tangsheng Chen
单片集成增强/耗尽 (E/D) 模式 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 在具有工程三重帽层的 AlGaN/GaN 异质结构上制造。盖层的能带很大程度上取决于其内部的偏振，这提高了栅极凹槽D-E模式转换的可控性。评估 3 英寸晶圆上阈值电压 (Vth) 的均匀性，E 模式和 D 模式器件的 Vth 标准偏差分别为 0.1V 和 0.14V。演示了直接耦合场效应晶体管逻辑 E/D HEMT 反相器和 17 级环形振荡器，后者在 1 V 电源电压下显示出 201 MHz 的振荡频率，对应于 146 ps/级的传播延迟和 1.96 pJ/级的功率延迟积。
Monolithic integrated enhancement/depletion (E/D)-mode AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated on an AlGaN/GaN heterostructure with an engineered triple-cap-layer. The energy band of the cap layer is greatly tailored by the polarizations within it, which improves the controllability of D-to-E mode conversion with gate recess. The uniformity of the threshold voltage (Vth) across a 3″ wafer is assessed and the standard deviations of Vth are 0.1 V and 0.14 V for E-mode and D-mode devices, respectively. Direct-coupled field-effect transistor logic E/D HEMT inverter and 17-stage ring oscillator are demonstrated, and the latter shows a oscillation frequency of 201 MHz at a supply voltage of 1 V, corresponding to a propagation delay of 146 ps/stage and a power-delay product of 1.96 pJ/stage.