Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions
Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions
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DOI：
10.1063/1.3224179
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发表时间：
2009-09
影响因子：
4
通讯作者：
Y. Do;J. Kwak;Y. C. Bae;Kyooho Jung;H. Im;Jin-Pyo Hong
中科院分区：
文献类型：
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作者：
Y. Do;J. Kwak;Y. C. Bae;Kyooho Jung;H. Im;Jin-Pyo Hong
研究了 TiO2（富氧，区域 1）/TiO2−x（贫氧，区域 2）多层同质结作为高电阻和低电阻转变的替代电阻开关结构。展示了稳定的双极电阻开关特性，包括稳定的开关速度（微秒）和耐久性行为，以及长保留时间（>104 秒）。多层结构中的电阻切换现象的本质似乎是传导路径和氧化还原反应的组合，这是由氧离子在多层结构的富氧区域和贫氧区域之间漂移引起的。还讨论了双极开关行为的可能传导草图。
TiO2 (oxygen rich, region 1)/TiO2−x (oxygen poor, region 2) multilayer homojunctions were studied as alternative resistive switching structures for both high and low resistance transitions. Stable bipolar resistive switching characteristics, including stable switching speeds (microseconds) and endurance behaviors, as well as long retention times (>104 s) were demonstrated. The nature of the resistive switching phenomenon in multilayer structures seems to be a combination of the conduction path and the redox reaction, resulting from the oxygen ions drifting between the oxygen rich and poor regions of the multilayer structures. A possible conduction sketch for bipolar switching behaviors is also discussed.