Tunable photonic strength in porous GaP
Tunable photonic strength in porous GaP
复制标题
多孔 GaP 中的可调谐光子强度
DOI：
10.1063/1.1485316
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发表时间：
2002
影响因子：
4
通讯作者：
J. Kelly
中科院分区：
文献类型：
--
作者：
J. Rivas;A. Lagendijk;R. Tjerkstra;D. Vanmaekelbergh;J. Kelly
研究了电化学腐蚀法制备的多孔磷化镓薄膜的光散射特性。我们发现，多孔性半导体的光子强度可以从弱到极强调节。这种可调性与气孔的密度和大小有关，气孔的密度和大小由GaP晶体的掺杂密度和刻蚀电位控制。此外，电化学刻蚀不会引入任何显著的光吸收，这使得多孔间隙适合于许多光子应用。
The light-scattering properties of porous gallium phosphide, prepared by electrochemical etching, are investigated. We show that the photonic strength of the porous semiconductor can be tuned from weak to extremely strong. This tunability is related to the density and size of the pores, which are controlled by the dopant density of the GaP crystals, and the etching potential. Moreover, electrochemical etching does not introduce any significant optical absorption, which makes porous GaP suitable for many photonic applications.