Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells
Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells
复制标题
DOI：
10.1088/1674-1056/ab4046
复制
发表时间：
2019-10
影响因子：
1.7
通讯作者：
Changfu Li;Kaiju Shi;X. Mingsheng;Xiangang Xu;Z. Ji
中科院分区：
文献类型：
--
作者：
Changfu Li;Kaiju Shi;X. Mingsheng;Xiangang Xu;Z. Ji
The photoluminescence (PL) properties of blue multiple InGaN/GaN quantum well (BMQW) and green multiple InGaN/GaN quantum well (GMQW) formed on a single sapphire substrate are investigated. The results indicate that the peak energy of GMQW-related emission (P G) exhibits more significant" S-shaped" dependence on temperature than that of BMQW-related emission (P B), and the excitation power-dependent carrier-scattering effect is observed only in the P G emission; the excitation power-dependent total blue-shift (narrowing) of peak position (line-width) for the P G emission is more significant than that for the P B emission; the GMQW shows a lower internal quantum efficiency than the BMQW. All of these results can be attributed to the fact that the GMQW has higher indium content than the BMQW due to its lower growth temperature and late growth, and the higher indium content in the GMQW induces a more significant compositional fluctuation, a stronger quantum confined Stark effect, and more non-radiative centers.(paper)
