Break Voltage of the 1G0 Contact of Noble Metals and Alloys
Break Voltage of the 1G0 Contact of Noble Metals and Alloys
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DOI：
10.1380/ejssnt.2009.891
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发表时间：
2009-01-01
影响因子：
0.7
通讯作者：
Sakai, Akira
中科院分区：
文献类型：
--
作者：
Miura, Daisuke;Iwata, Keiichi;Sakai, Akira
本文测量了Au、Ag、Cu和AuAg合金在室温和真空中的1G_0接触的击穿电压。利用断开结技术，我们制作了一个1G0触点，并通过施加电压斜坡将其断开。每个金属的断裂电压表现出广泛的分布，和平均断裂电压降低为Au > Cu大于或类似于Ag，在与元素的依赖性的高偏压稳定性的1G0接触在以前的实验研究中提出的一致。在AuAg合金中，一些合金的断裂电压分布呈现双峰结构，每个峰分别位于接近纯Au和Ag的1G0接触的断裂电压。这一观察结果表明，AuAg合金的断裂电压是由占据接触点的原子的元素种类局部确定的。
We have measured the break voltage of the 1G0 contact of Au, Ag, Cu, and AuAg alloys at room temperature in ultrahigh vacuum. Exploiting the break junction technique, we produced a 1G0 contact and broke it by applying a voltage ramp. The break voltage of each metal exhibits a broad distribution, and the average break voltage decreases as Au > Cu greater than or similar to Ag, in consistent with the elemental dependence of the high-bias stability of the 1G0 contact suggested in previous experimental studies. In AuAg alloys, the break-voltage distribution for some alloys exhibits a double-peak structure, each peak locating close to the break voltage of the 1G0 contact of pure Au and Ag, respectively. This observation suggests that the break voltage of AuAg alloys is locally determined by the elemental species of the atom occupying the contact site.