Thermal and Damp Heat Stability of High-Mobility In2O3-Based Transparent Conducting Films Fabricated at Low Process Temperatures
Thermal and Damp Heat Stability of High-Mobility In2O3-Based Transparent Conducting Films Fabricated at Low Process Temperatures
复制标题
低工艺温度下制备的高迁移率 In2O3 基透明导电薄膜的热稳定性和湿热稳定性
DOI：
10.1002/pssa.202000487
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Yuko Ueno
中科院分区：
文献类型：
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作者：
Takashi Koida;Yuko Ueno
透明导电氧化物(TCO)的高电子迁移率有助于在中等载流子密度下实现高电导率，由于较少的自由载流子吸收，导致透明度从可见光扩展到近红外。这些宽带TCO电极为提高光电子器件的性能提供了机会。本文介绍了TCO薄膜的热稳定性和湿热稳定性。研究发现，晶体生长方法的不同对晶体的初始电学性质和稳定性有很大影响。在200 °C沉积的In_2O_3：Me(Me：W，Ce)多晶薄膜表现出较高的迁移率，达到70-80 /cm~2V−_1s−_1，经湿热测试后保持稳定，在高于沉积温度的温度下保温后，提高了迁移率为110~140 /cm~2V/−_1s_−_1。相反，非晶态薄膜固化后制备的固相晶化In_2O_3：Me，H薄膜具有极高的迁移率(100-160 cm~2V−_1s−_1)，但经过湿热试验和高温退火热处理后，其稳定性比多晶薄膜有所降低。随着薄膜中氢含量的增加，薄膜的电学性能恶化加剧。结果表明，应根据器件的制造工艺，合理使用多晶膜和固相结晶膜。
High electron mobility of transparent conductive oxide (TCO) facilitates high conductivity at a moderate carrier density, resulting in an extension of the degree of transparency from visible to near‐infrared due to less free carrier absorption. These broadband TCO electrodes provide opportunities to improve the performance of optoelectronic devices. Herein, the thermal and damp heat stability characteristics of TCO films are described. It is found that the difference in the crystal growth method has a significant influence on the initial electrical properties and stability characteristics. Polycrystalline In2O3:Me (Me: W, Ce) films deposited at 200 °C exhibit a relatively high mobility of 70–80 cm2V−1s−1, are stable after a damp heat test, and improve the mobility of 110–140 cm2V−1s−1after postannealing at temperatures greater than the deposition temperature. Conversely, solid‐phase crystallized In2O3:Me,H films prepared by postannealing amorphous films exhibit an extremely high mobility of 100–160 cm2V−1s−1; however, they exhibit reduced stability characteristics after the damp heat test and high‐temperature annealing process compared to the polycrystalline films. The deterioration of the electrical properties increases as the hydrogen content in the films increases. The results suggest that polycrystalline and solid‐phase crystallized films should be used properly, according to the device manufacturing processes.