Tunable Emission from Localized Excitons Deterministically Positioned in Monolayer p – n Junctions

Tunable Emission from Localized Excitons Deterministically Positioned in Monolayer p – n Junctions
复制标题

确定性定位在单层 p – n 结中的局域激子的可调谐发射

DOI:
10.1021/acsphotonics.2c00811
复制
发表时间:
2022
期刊:
影响因子:
7
通讯作者:
Stern, Nathaniel P.
Stern, Nathaniel P.
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Lenferink, Erik J.;LaMountain, Trevor;Stanev, Teodor K.;Garvey, Ethan;Watanabe, Kenji;Taniguchi, Takashi;Stern, Nathaniel P.

文献摘要

相似文献

过渡金属二硫属化合物(TMD)是一种很有前途的固体单光子发射平台。由其二维性质提供的通用制造方法促进了TMD集成到光电子器件中,其中局部激子态可以被电泵浦。虽然这种功能对于量子纳米光子学中的应用是非常期望的,使得能够实现更紧凑和可扩展的设备,但是缺乏对发射器空间位置和能量的控制已经阻碍了TMD到量子光学系统中的集成。在这里,我们展示了单光子电致发光单层WSe2在横向栅极定义的结,允许静电环境进行调整原位。通过利用局部应变工程,我们可靠地将明亮的局部激子态定位在栅极定义的结的光学活性区域中,从而能够确定性地创建主要产生单光子发射的器件。调制的栅极电压调谐不同的静电制度之间的发射,揭示了一个新的本地化的激子状态,表现出依赖于栅极的红移。实现了超过10 meV的电致发光的光谱位移,证明了在TMD器件中同时电泵浦和调谐局域激子发射的能力。
Transition metal dichalcogenides (TMDs) are a promising solid-state platform for single photon emission. The versatile fabrication methods afforded by their two-dimensional nature facilitate the integration of TMDs into optoelectronic devices where localized exciton states can be electrically pumped. While this functionality is highly desirable for applications in quantum nanophotonics, enabling more compact and scalable devices, the lack of control of emitter spatial positions and energies has impeded the integration of TMDs into quantum optical systems. Here we demonstrate single photon electroluminescence from monolayer WSe2in a lateral gate-defined junction that allows the electrostatic environment to be tuned in situ. By utilizing local strain engineering, we reliably position bright localized exciton states in the optically active region of the gate-defined junction, enabling the deterministic creation of devices that predominantly produce single photon emission. Modulation of the gate voltages tunes the emission between different electrostatic regimes, revealing a new localized exciton state that exhibits a gate-dependent red-shift. A spectral shift of the electroluminescence of over 10 meV is achieved, demonstrating the capability for simultaneous electrical pumping and tuning of localized exciton emission in TMD devices.