Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with the partial silicon doping in AlGaN layer
Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with the partial silicon doping in AlGaN layer
复制标题
AlGaN层部分硅掺杂的Al0.25Ga0.75N/GaN高电子迁移率晶体管的击穿电压分析
作者：
段宝兴
