The role of defects on radiative transitions in nitrogen doped ZnSe
The role of defects on radiative transitions in nitrogen doped ZnSe
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DOI：
10.1016/0022-0248(95)00585-4
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发表时间：
1996-02-01
影响因子：
1.8
通讯作者：
Fujita, S
中科院分区：
文献类型：
--
作者：
Hauksson, IS;Suda, J;Fujita, S
用时间分辨光谱法研究了分子束外延（MBE）和金属有机分子束外延（MOMBE）生长的氮掺杂ZnSe在18k下的辐射发射。随着氮掺入的增加，自由激子发射的寿命和受体结合激子跃迁的振荡强度降低。由于缺陷浓度较高，与MBE生长的ZnSe:N相比，MOMBE生长的样品表现出不同或额外的补偿机制。随着氮掺入的增加，供体-受体对发射的特征寿命增加，因为载流子被困在更深的电位阱中，因此更局域化的载流子的辐射寿命有望延长。
The radiative emission in nitrogen doped ZnSe grown by molecular beam epitaxy (MBE) and metalorganic molecular beam epitaxy (MOMBE) has been studied by means of time-resolved spectroscopy at 18 K. The lifetime of the free exciton emission and the oscillator strength of the acceptor bound exciton transition decreases with increased nitrogen incorporation. ZnSe:N MOMBE grown samples show different or additional compensation mechanism compared with MBE grown ZnSe:N due to higher defect concentration, The characteristic lifetime of the donor-acceptor pair emission is found to increase with increased incorporation of nitrogen as longer radiative lifetime of more localized carriers is expected as the carriers are trapped in deeper potential wells.