In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts
In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts
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DOI：
10.1016/j.actamat.2008.01.038
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发表时间：
2008-06
期刊：
影响因子：
9.4
通讯作者：
K. Fujiwara;K. Maeda;N. Usami;G. Sazaki;Y. Nose;A. Nomura;T. Shishido;K. Nakajima
中科院分区：
文献类型：
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作者：
K. Fujiwara;K. Maeda;N. Usami;G. Sazaki;Y. Nose;A. Nomura;T. Shishido;K. Nakajima
在深过冷区直接观察到了硅晶体生长行为的转变。我们成功地观察到，随着过冷度的增加，平行孪晶的一部分开始出现小面枝晶生长。实验确定了小面枝晶生长的临界过冷度为ΔT= 10 K。我们还证实，平行孪晶与多面枝晶生长之间形成的晶界，而不是在熔体生长过程中的晶界。平行孪晶的形成被解释在{111}小平面在生长界面上的孪晶形成的模型。
We directly observed the transition of crystal growth behavior of Si in a low undercooling region. We succeeded in observing the initiation of faceted dendrite growth from a portion of parallel twins with increasing degrees of undercooling. The critical undercooling for growing a faceted dendrite was experimentally determined to be ΔT=10K. We also confirmed that parallel twins associated with faceted dendrite growth were formed between grain boundaries and not at grain boundaries during melt growth. The parallel-twin formation was explained in terms of a model of twin formation on the {111} facet plane at the growth interface.