FABRICATION OF BISMUTH NANOWIRE DEVICES USING FOCUSED ION BEAM MILLING
FABRICATION OF BISMUTH NANOWIRE DEVICES USING FOCUSED ION BEAM MILLING
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DOI：
10.1063/1.3203244
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发表时间：
2009-07
期刊：
影响因子：
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通讯作者：
Han-Hao Cheng;M. Alkaisi;S. Wu;Chuan-Pu Liu
中科院分区：
文献类型：
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作者：
Han-Hao Cheng;M. Alkaisi;S. Wu;Chuan-Pu Liu
在这项工作中，开发了聚焦离子束 (FIB) 铣削工艺，使用 FEI-200 双束 FIB 系统制造 50 nm Bi 纳米线和晶体管结构。在制造过程中，50 nm 的铋膜通过 EBL 图案化 PMMA 窗口热蒸发到带有预定义接触垫的 SiO2 基板上。通过使用 30 KeV Ga+ 离子束铣削不需要的区域，已成功制造出宽度范围为 30 nm 至 100 nm 的 Bi 纳米线。单像素线离子束消隐技术已被用来制造直径小至 30 nm、长几微米的 Bi 纳米线。为了在 50 nm 以下的铋纳米线中形成良好的欧姆接触，在原位铂纳米线接触沉积后，使用 FIB 溅射掉铋的表面氧化物，开发了一种钻孔填充工艺。据我们所知，这是首次使用聚焦离子束工艺来制造铋纳米线。使用半导体对制造的 Bi 纳米线进行了电学表征。
In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI‐200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO2 substrates with pre‐defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single‐pixel‐line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill‐and‐fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in‐situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were electrically characterised using a semicond...