Measurement and characterization of die temperature sensor
Measurement and characterization of die temperature sensor
复制标题
芯片温度传感器的测量和表征
DOI：
10.1109/semi-therm.2014.6892213
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
A. Bono
中科院分区：
文献类型：
--
作者：
Praveen Kumar Ramamoorthy;A. Bono
芯片温度传感器(DTS)是硅芯片/芯片中的一种电路，用于在向客户发货之前在不同温度下测试设备的功能时测量其温度。DTS读数超过规范将导致设备在生产中被宣布为热测试不合格，并在重新测试后报废。芯片温度传感器的不准确可能会导致好的器件报废。由于通过芯片温度传感器进行温度测量是唯一的芯片温度测量方式，因此开发了一种通过与封装表面温度进行比较来测量其精度的表征方法。对一种低轮廓四平封装(LQFP)进行了研究，结果表明，对于一些在测试中失败的设备和在投入生产之前的新产品，DTS的精度不符合规格。该方法已被建立用于检查器件的DTS失效潜力，并显著节省了测试后报废的良好器件，并优化了边缘失效器件在晶片级的校准。
Die temperature sensor (DTS) is an electrical circuit in a silicon chip/ Die to measure its temperature while testing the device at various temperatures for its functionality before being shipped to the customer. DTS reading beyond the specification will lead to device being declared as failed for thermal test in production and scrapped after retest. Inaccuracy of the die temperature sensor may lead to scrapping of good devices. As temperature measurement through die temperature sensor is the only mode of measurement of temperature of the die, a characterization method has been developed to measure its accuracy by comparing with the package surface temperature. A study was performed on a low profile quad flat package (LQFP) and the results revealed DTS accuracy to be out of specification for some of the devices that failed during testing and for new products before introducing into production. This method has been established to check DTS failing potentiality of the devices and has resulted in significant saving of good devices being scrapped after testing and in optimizing calibration at wafer level for the devices with marginal failures.