Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere
Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere
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DOI：
10.1063/1.4863436
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发表时间：
2014-01-27
影响因子：
4
通讯作者：
Kozyrev, A. B.
中科院分区：
文献类型：
--
作者：
Altynnikov, A. G.;Gagarin, A. G.;Kozyrev, A. B.
研究了氧退火对铁电薄膜电容器结构Pt/Ba0.3Sr0.7TiO3/Pt 切换时间的影响。通过实验测量了退火前后它们的电容对脉冲控制电压的响应。事实证明，退火导致电容缓慢弛豫过程的抑制和阈值控制电压的增加。因此，这些结构对于快速作用微波器件的制造具有吸引力。 (C) 2014 年作者。除非另有说明，所有文章内容均根据 Creative Commons Attribution 3.0 Unported License 获得许可。
The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.