Parallel combination of high-efficiency amplifiers with spurious rejection for concurrent multiband operation
Parallel combination of high-efficiency amplifiers with spurious rejection for concurrent multiband operation
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DOI：
10.1109/eumc.2016.7824533
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发表时间：
2016-10
期刊：
影响因子：
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通讯作者：
Jun Enomoto;Haruka Nishizawa;R. Ishikawa;Y. Takayama;K. Honjo
中科院分区：
文献类型：
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作者：
Jun Enomoto;Haruka Nishizawa;R. Ishikawa;Y. Takayama;K. Honjo
提出了一种用于高数据速率无线通信系统的高效并发多频带功率放大器配置。通过在输入输出基频匹配电路中加入杂散抑制功能，设计了单频段高效功率放大器。这些放大器是并联的。在这种配置中，与通常的双频带或宽带放大器相比，存在显著的优点，特别是在失真特性方面。为了证实这一点，我们制作了一个4.5-/8.5 GHz波段的GaN HEMT放大器，在4.49 GHz和8.42 GHz的同时工作时，它的最大漏极效率分别为64%和54%，最大功率附加效率分别为61%和41%，近带杂散水平被高度抑制，小于−38 dBc。
An efficient concurrent multiband power amplifier configuration has been proposed for high-data-rate wireless communication systems. Single-band high-efficiency power amplifiers are designed by adding spurious rejection functions which are embedded in input and output fundamental-frequency matching circuits. And those amplifiers are connected in parallel. In this configuration, significant merits exist in comparison with usual dual-band or broadband amplifiers, especially with regard to distortion characteristics. To confirm this, a 4.5-/8.5-GHz-band GaN HEMT amplifier was fabricated, and it exhibited maximum drain efficiencies of 64% and 54% and maximum power added efficiencies of 61% and 41% at 4.49 GHz and 8.42 GHz, respectively, on a concurrent operation with a highly suppressed near-band spurious level of less than −38 dBc.