Magnetoresistance of semiconductor-metal hybrid structures: The effects of material parameters and contact resistance
Magnetoresistance of semiconductor-metal hybrid structures: The effects of material parameters and contact resistance
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DOI：
10.1103/physrevb.67.195312
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发表时间：
2003-05
影响因子：
3.7
通讯作者：
M. Holz;O. Kronenwerth;D. Grundler
中科院分区：
文献类型：
--
作者：
M. Holz;O. Kronenwerth;D. Grundler
本文采用有限元方法研究了矩形器件中超导体-金属混合结构的异常磁电阻效应。这些最近被发现表现出有趣的磁场传感器感兴趣的属性。在施加的磁场中的设备中的电流和电势分布计算。通过这些方法，我们研究了EMR效应，特别是作为材料参数和半导体与金属之间的接触电阻ρc的函数。在我们的计算中，我们发现，ρc应该在一个特定的操作制度，以获得显着的磁阻效应。我们表明，通过在半导体中的电子迁移率的混合器件的电压和电流的灵敏度可以相对于在10 mT范围内的操作字段进行优化。
We have used the finite element method to study the extraordinary magnetoresistance (EMR) effect of semiconductor-metal hybrid structures in rectangular device geometries. These have recently been found to exhibit intriguing properties interesting for magnetic-field sensors. Current and potential distributions in the devices are calculated in an applied magnetic field. By these means, we investigate the EMR effect, in particular, as a function of material parameters and of the contact resistance ρc between the semiconductor and the metal. In our calculations we find that ρc should be within a specific operation regime in order to obtain a pronounced magnetoresistance effect. We show that by means of the electron mobility in the semiconductor the voltage and the current sensitivity of a hybrid device can be optimized with respect to an operation field in the 10-mT range.