Designing p-Type Semiconductor-Metal Hybrid Structures for Improved Photocatalysis
Designing p-Type Semiconductor-Metal Hybrid Structures for Improved Photocatalysis
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DOI：
10.1002/anie.201310635
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发表时间：
2014-05-12
影响因子：
16.6
通讯作者：
Xiong, Yujie
中科院分区：
文献类型：
--
作者：
Wang, Lili;Ge, Jing;Xiong, Yujie
提出了一种实用的策略，通过利用 p 型半导体和金属之间的肖特基势垒来促进半导体中空穴的迁移（其低速率限制了光催化效率）。人们发现高功函数是在半导体表面刻面和金属之间构建这种理想的肖特基结的重要选择规则。选择面时必须考虑本征电荷空间分布，因为它会导致光生电子和空穴在某些半导体面上的积累。重要的是，这些面具有高功函数，这与在p型半导体-金属混合结构中形成肖特基结所需的特性相同。因此，混合设计中的半导体晶体可以更好地被具有高功函数的单面包围，从而协同两种效应：肖特基势垒与电荷空间分离。
A practical strategy is proposed to facilitate the migration of holes in semiconductor (the low rate of which limits photocatalytic efficiency) by taking advantage of the Schottky barrier between p-type semiconductor and metal. A high work function is found to serve as an important selection rule for building such desirable Schottky junction between semiconductor surface facets and metal. The intrinsic charge spatial distribution has to be taken into account when selecting the facets, as it results in accumulation of photoexcited electrons and holes on certain semiconductor facets. Importantly, the facets have a high work function, the same characteristic required for the formation of Schottky junction in a p-type semiconductor-metal hybrid structure. As a result, the semiconductor crystals in the hybrid design may be better enclosed by single facets with high work function, so as to synergize the two effects: Schottky barrier versus charge spatial separation.