REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2×1 and 1×2 Induced by Specimen Heating Current
REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2×1 and 1×2 Induced by Specimen Heating Current
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样品加热电流引起的 Si(001) 2×1 和 1×2 单畴表面转变的 REM 观察
DOI：
10.1143/jjap.28.l858
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发表时间：
1989
影响因子：
1.5
通讯作者：
K. Yagi
中科院分区：
文献类型：
--
作者：
Hisatoshi Kahata;K. Yagi
用超高真空反射电子显微镜原位观察到Si（001）2×1和1×2表面之间的电流诱导转换。当样品在高于700°C的一定电流下退火时，表面由两个由单高度台阶划分的畴组成，但其中一种畴比另一种畴宽得多。当水流方向相反时，狭窄的梯田由于较高侧台阶向较高侧移动和较低侧台阶向较低侧轻微移动而扩大了面积。较宽的梯田减少了它们的宽度。在较高温度下，该过程更快。发现主畴的类型是根据电流是在升压方向还是在降压方向确定的。
A current-induced conversion between Si(001)2×1 and 1×2 surfaces is observed in situ by ultrahigh-vacuum reflection electron microscopy. When the specimen is annealed with a certain current above 700°C, the surface is composed of two domains divided by single-height steps, but one type of domain is much wider than the other. When the current direction is reversed, narrow terraces widen their areas as a result of movements of higher side steps to the higher side and slight movements of lower side steps to the lower side. The wider terraces reduce their width. The process is quicker at higher temperature. It was found that the type of major domain is determined on the basis of whether the current is in the step-up or the step-down direction.