Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETs
Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETs
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全面了解双轴应变 Si pMOSFET 中的库仑散射迁移率
DOI：
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发表时间：
2009
影响因子：
3.1
通讯作者：
S. Takagi
中科院分区：
文献类型：
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作者：
Yi Zhao;M. Takenaka;S. Takagi
在这篇简报中，使用弛豫Si<sub>1-</sub><i>x</i><i>Gex</i>（<i>x</i>= 0.1-0.4）衬底上的应变Si（s-Si）沟道，实验研究了（100）/lang 110范围pMOSFET反型层中双轴拉伸应变对受衬底杂质和界面态库仑散射（分别为μ<sub>sub</sub>和μ<sub>it</sub>结果表明，双轴拉伸应变降低了受衬底-杂质库仑散射限制的空穴迁移率（mu<sub>sub</sub>），但由于拉伸应变后Si/SiO2界面处空穴与散射中心之间的平均距离增加，使受界面态库仑散射限制的空穴迁移率（mu<sub>it</sub><sub></sub>这些趋势与电子的相反。电子和空穴之间的不同应变依赖性的μ<sub>sub</sub>和μ<sub>it</sub>可以解释一个通用的双带模型的基础上的电子和空穴的子带结构。
In this brief, the effect of biaxial tensile strain on the hole mobility limited by substrate-impurity and interface-state Coulomb scatterings (mu<sub>sub</sub> and mu<sub>it</sub>, respectively) in an inversion layer of (100)/lang110 rang pMOSFETs is investigated experimentally with strained-Si (s-Si) channels on relaxed Si<sub>1-</sub> <i>x</i>Ge<i>x</i> (<i>x</i> = 0.1-0.4) substrates. Our results show that biaxial tensile strain degrades the hole mobility limited by substrate-impurity Coulomb scattering (mu<sub>sub</sub>) , while it enhances the hole mobility limited by interface-state Coulomb scattering (mu<sub>it</sub>) because of the increase in the average distance between holes and scattering centers at the Si/SiO<sub>2</sub> interface after the tensile strain. These trends are opposite to that of electron ones. The different strain dependence between electrons and holes in terms of mu<sub>sub</sub> and mu<sub>it</sub> can be explained by a universal two-band model based on the subband structures of electrons and holes.