Hidden in-plane anisotropy of interfaces in Zn(Mn)Se /BeTe quantum wells with a type-II band alignment.
Hidden in-plane anisotropy of interfaces in Zn(Mn)Se /BeTe quantum wells with a type-II band alignment.
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具有 II 型能带排列的 Zn(Mn)Se /BeTe 量子阱中界面隐藏的面内各向异性。
DOI：
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发表时间：
2002
影响因子：
8.6
通讯作者：
L. Molenkamp
中科院分区：
文献类型：
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作者：
D. Yakovlev;A. Platonov;E. Ivchenko;V. Kochereshko;C. Sas;W. Ossau;L. Hansen;A. Waag;G. Landwehr;L. Molenkamp
本文研究了具有Ⅱ型能带排列的半磁（Zn，Mn）Se/BeTe和半磁ZnSe/BeTe量子阱结构中空间间接光跃迁引起的圆偏振和线偏振辐射。由于与特定界面相关的光学矩阵元素的巨大的面内各向异性，由磁场诱导的光生载流子的完全自旋取向导致发光的不纯粹的圆形而是椭圆偏振。通过理论与实验的比较，估算了ZnSe/BeTe界面的光学各向异性参数。所开发的理论方法可以应用于揭示光学各向异性的纳米结构的大类。
Circularly and linearly polarized radiation due to spatially indirect optical transitions is studied in semimagnetic (Zn,Mn)Se/BeTe and nonmagnetic ZnSe/BeTe quantum-well structures with a type-II band alignment. Because of the giant in-plane anisotropy of the optical matrix elements related to a particular interface, complete spin orientation of photocarriers induced by magnetic fields leads not to purely circular but instead to elliptical polarization of the luminescence. From comparison between theory and experiment the parameter of optical anisotropy of a ZnSe/BeTe interface is evaluated. The developed theoretical approach can be applied for the large class of nanostructures revealing optical anisotropy.