Mechanism of a hydrogenating polycrystalline silicon in hydrogen plasma annealing
Mechanism of a hydrogenating polycrystalline silicon in hydrogen plasma annealing
复制标题
氢等离子体退火氢化多晶硅的机理
DOI：
10.1063/1.98575
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
S. Kohda
中科院分区：
文献类型：
--
作者：
K. Nakazawa;H. Arai;S. Kohda
本文研究了多晶硅氢等离子体退火的氢化机理。氢深度分布测量表明，氢原子通过扩散引入多晶硅中，其中氢原子的扩散常数和表面密度随着射频功率的升高而增加。电子自旋共振（ESR）测量的悬挂键的密度表明，氢原子钝化悬挂键更有效地与较高的射频功率。通过使用在各种射频功率下氢化的多晶硅，已经制造了薄膜晶体管（TFT）以研究氢化对TFT场效应迁移率的影响。结果表明，使用50 W的射频功率的氢等离子体退火增加了场效应迁移率。然而，当射频功率高于50 W时，也观察到场效应迁移率的降低，这被认为是由等离子体诱导的表面损伤引起的。
The hydrogenation mechanism has been studied in the hydrogen plasma annealing of a polycrystalline silicon (polysilicon). Hydrogen depth profile measurements reveal that hydrogen atoms are introduced into the polysilicon by diffusion in which the diffusion constant and the surface density of hydrogen atoms increase as the rf power rises. The density of dangling bonds measured by electron spin resonance (ESR) shows that hydrogen atoms passivate dangling bonds more effectively with a higher rf power. By using the polysilicon hydrogenated at various rf powers, thin‐film transistors (TFT’s) have been fabricated to investigate the effect of hydrogenation on the TFT field‐effect mobility. The results show that hydrogen plasma annealing with a rf power of 50 W increases the field‐effect mobility. However, a decrease of the field‐effect mobility, which is considered to be caused by plasma induced surface damage, is also observed when the rf power is higher than 50 W.