On the mechanisms of energy transfer between quantum well and quantum dashes

On the mechanisms of energy transfer between quantum well and quantum dashes
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量子阱与量子破折号之间的能量传递机制

DOI:
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发表时间:
2012
期刊:
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通讯作者:
A. Forchel
A. Forchel
中科院分区:
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文献类型:
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作者:
G. Sȩk;R. Kudrawiec;P. Podemski;J. Misiewicz;A. Somers;S. Höfling;J. Reithmaier;M. Kamp;A. Forchel

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研究了InAs/InGaAs/InGaAlAs/InP材料系统中由几个纳米厚势垒隔开的量子阱(QW)到量子短路(QDash)的能量传递机制。我们发现,在足够低的温度下,量子阱中非共振光产生的激子,然后通过声子弛豫转移到基态的激子,可以被QDash恢复。由QW和QDash激子态之间的能量差定义的多余转移能量可以通过与LO声子的相互作用来耗散,如果满足各自的能量匹配的话。这种从量子阱到量子虚线的激子注入是一个对单个激子组分,即电子和空穴的能级结构不敏感的过程。结果表明,在单粒子图像中,QDASH中的电子能量比相应的QW能量高出50 meV以上,这阻碍了电子从量子势垒向DASH的转移。我们通过实验证明了。
We investigate energy transfer mechanisms from a quantum well (QW) to quantum dashes (QDashes) separated by a few nanometer thick barrier in InAs/InGaAs/InGaAlAs/InP material system. We show that at sufficiently low temperatures excitons, which are non-resonantly photogenerated in the QW and then transferred to the ground state via phonon relaxation, can be retrieved by QDashes. The excess of the transferred energy, defined by the energy difference between the QW and QDash exciton states, can be dissipated via interaction with LO phonons if the respective energy matching is satisfied. This kind of exciton injection from QW to QDashes is a process insensitive to the energy level structure of the individual exciton components, i.e., electrons and holes. It is shown that within the single particle picture, the electron energy in QDashes is higher by more than 50 meV compared to the corresponding QW energy, which prevents the electron transfer from quantum well to the dashes. We show experimentally that despi...