High-resolution x-ray diffraction and high-resolution scanning electron microscopy studies of Si-based structures with a buried amorphous layer
High-resolution x-ray diffraction and high-resolution scanning electron microscopy studies of Si-based structures with a buried amorphous layer
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具有埋入非晶层的硅基结构的高分辨率 X 射线衍射和高分辨率扫描电子显微镜研究
DOI：
10.1063/1.368919
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发表时间：
1998
影响因子：
3.2
通讯作者：
E. Prieur
中科院分区：
文献类型：
--
作者：
T. Ahilea;E. Zolotoyabko;J. Härtwig;M. Ohler;E. Prieur
用高分辨X射线衍射和高分辨扫描电子显微镜测量了氧注入和高温退火制备的具有非晶埋层的Si样品的结构和几何参数。通过使用一个新开发的模拟程序精确拟合的X射线衍射光谱和重要的参数推导出，如平均波动的非晶层的厚度（“界面粗糙度”）和在Si顶层的晶面间距。获得的数据显示界面粗糙度降低，即，在额外的高温退火之后，样品的质量得到改善。这一结论得到了电子显微镜图像的支持，表明作为额外的热处理的结果，SiO2沉淀物的更完全的溶解。更复杂的退火的重要性也得到了欧洲同步辐射实验室形貌光束线上的莫尔x射线衍射形貌图的证实。
Structural and geometrical parameters of Si samples with buried amorphous layers, produced by oxygen implantation and high-temperature annealings, were measured by high-resolution x-ray diffraction and high-resolution scanning electron microscopy. By using a newly developed simulation procedure precise fittings of x-ray diffraction spectra were made and important parameters were derived, such as the averaged fluctuations of the thickness of the amorphous layer (“interface roughness”) and of the interplanar spacing in the Si top layer. The data obtained revealed a reduction in interface roughness, i.e., an improvement of the samples’ quality after additional high-temperature annealing. This conclusion was supported by electron microscopy images demonstrating a more complete dissolution of SiO2 precipitates as a result of additional heat treatment. The importance of more sophisticated annealing was also confirmed by the Moire x-ray diffraction topographs taken on the topography beamline of the European Sync...