Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices
Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices
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DOI：
10.1016/s0379-6779(97)80097-5
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发表时间：
1997-03-15
期刊：
影响因子：
4.4
通讯作者：
Einerhand, REF
中科院分区：
文献类型：
--
作者：
deLeeuw, DM;Simenon, MMJ;Einerhand, REF
目前的聚合物微电子器件通常是基于p型半导体聚合物的单极器件。常温下稳定的双极器件是理想的，但由于缺乏稳定的n型掺杂导电聚合物，目前还没有报道。从水和氧的标准氧化还原电位出发，推导了n型掺杂导电聚合物对电极电位的稳定性要求。然后将预测结果与导电聚合物稳定性的实验数据进行了比较。得到了一个很好的协议。稳定的n型掺杂聚合物的电极电位约为0~+0.5V(SCE)，与稳定的非掺杂p型聚合物的电极电位要求相似。分析了双极器件的后果。为了从已知掺杂的p型和n型导电聚合物中实现热力学稳定的双极器件，需要与湿氧进行氧化还原反应的巨大过电位。最后，讨论了接受热力学不稳定性的可能的解决方案。
Present polymeric microelectronic devices are typically unipolar devices, based on p-type semiconducting polymers. Bipolar devices stable under ambient conditions are desirable, but have not yet been reported due to a lack of stable n-type doped conducting polymers. Starting from the standard redox potentials of, especially, water and oxygen, stability requirements on electrode potentials of n-type doped conducting polymers are derived. The predictions are then compared with experimental data on stability of conducting polymers. A good agreement is obtained. An electrode potential of about 0 to +0.5 V (SCE) is required for stable n-type doped polymers, similar to the requirement on the electrode potential for stable undoped p-type polymers. Consequences for bipolar devices are analysed. Huge overpotentials for the redox reaction with wet oxygen are required in order to realize thermodynamically stable bipolar devices from known doped p-type and n-type conducting polymers. Finally, possible solutions, accepting thermodynamic instability, are discussed.