Transparent magnetic semiconductors based on ZnO
Transparent magnetic semiconductors based on ZnO
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DOI：
10.1088/0953-8984/16/48/008
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发表时间：
2004-11
期刊：
影响因子：
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通讯作者：
H. Saeki;H. Matsui;T. Kawai;H. Tabata
中科院分区：
文献类型：
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作者：
H. Saeki;H. Matsui;T. Kawai;H. Tabata
通过使用激光分子束外延的非平衡薄膜技术将 Co 或 V 等过渡金属引入纤锌矿 ZnO 晶体中，构建了透明磁性半导体。在蓝宝石衬底上外延形成的ZnO薄膜中，取代Zn的Co和V具有二价阳离子状态。拉曼测量表明，当 Co 和 V 取代时，纤锌矿晶体结构可以分别保持高达 15% 和 5%。光电发射光谱的结果也表明Co确实不是金属态而是2+态。 (Zn, Co)O 薄膜的磁圆二色性 (MCD)、X 射线 MCD、超导量子干涉装置 (SQUID) 和核磁共振 (NMR) 测量表明，磁化强度为 0.1–0.3 μB/Co 的铁磁特性。
Transparent magnetic semiconductors have been constructed by introducing transition metals such as Co or V into wurtzite ZnO crystals by a non-equilibrium thin film technique using laser molecular beam epitaxy. Co and V substituted for Zn have a divalent cationic state in the ZnO thin films formed epitaxially on the sapphire substrates. Raman measurements show that the wurtzite crystal structure can be maintained up to 15% and 5% for Co and V substitution, respectively. The results from photoemission spectra also suggest that Co does has not a metal state but a 2+ state. Magnetic circular dichroism (MCD), x-ray MCD, superconducting quantum interference device (SQUID) and nuclear magnetic resonance (NMR) measurements on (Zn, Co)O films indicate ferromagnetic properties with magnetizations of 0.1–0.3 μB/Co.