Photoreflectance study of surface Fermi level in GaAs and GaAlAs
Photoreflectance study of surface Fermi level in GaAs and GaAlAs
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DOI：
10.1063/1.103916
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发表时间：
1990-11
影响因子：
4
通讯作者：
H. Shen;M. Dutta;L. Fotiadis;P. Newman;R. Moerkirk;W. Chang;R. Sacks
中科院分区：
文献类型：
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作者：
H. Shen;M. Dutta;L. Fotiadis;P. Newman;R. Moerkirk;W. Chang;R. Sacks
研究了GaAs和AlGaAs结构的Franz-Keldysh振荡，发现振荡得到的电场与静电计算得到的电场一致。我们的研究结果表明，在正常的光反射实验中，泵浦光束和探头光束的照明会显著影响测量结果，从而错误地导致电场值的减小。测定了不同Al摩尔分数AlGaAs裸表面的费米能级。
Franz–Keldysh oscillations from GaAs and AlGaAs structures have been studied and we find that the electric field obtained from the oscillations is in agreement with that derived from electrostatic calculations. Our results show that illumination from pump and probe beams in a normal photoreflectance experiment can significantly affect the measurement and thus erroneously lead to a reduced value of the electric field. The Fermi level on the bare surface of AlGaAs with different Al mole fraction has also been determined.