T.Shimatani: "Device Characteristic Variation in 0.01μm MOSFET Evaluated by Three-Dimensional Monte Carlo Simulation" Digest of Silicon Nanoelectronics Workshop 1997. 16-17 (1997)
T.Shimatani: "Device Characteristic Variation in 0.01μm MOSFET Evaluated by Three-Dimensional Monte Carlo Simulation" Digest of Silicon Nanoelectronics Workshop 1997. 16-17 (1997)
复制标题
T. Shimatani:“通过三维蒙特卡罗模拟评估 0.01μm MOSFET 的器件特性变化”硅纳米电子学研讨会摘要 1997. 16-17 (1997)
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: