Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy
Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy
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分子束外延生长单晶三氧化钨薄膜的电致变色性能
DOI：
10.1109/imfedk.2016.7521686
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
K. Inaba
中科院分区：
文献类型：
--
作者：
T. Murayama;W. Kuwagata;K. Koike;Y. Harada;S. Sasa;M. Yano;S. Kobayashi;K. Inaba
采用分子束外延法生长了C轴取向的单晶单斜WO3薄膜，并通过在H2SO4水溶液中制作溶液门电致变色器件来研究其性能。这些器件在以下三种状态下表现出可逆变化；偏置正栅极电压后具有低电阻率的有色状态，偏置负栅极电压后具有低电阻率的透明状态，以及热退火后具有高电阻率的另一种透明状态。在前两种状态下，退火后单斜晶WO3薄膜的c轴长度与后一种状态相比略有扩大。这些结果一致地用 WO3 的质子化和水合来解释。
C-axis oriented single-crystalline monoclinic WO3 films were grown by molecular beam epitaxy, and studied their properties by fabricating solution-gate electrochromic devices in H2SO4 aqueous solution. These devices exhibited reversible change in the following three states; a colored state with low electrical resistivity after biasing a positive gate voltage, a transparent state with low electrical resistivity after biasing a negative gate voltage, and another transparent state with high electrical resistivity after thermal annealing. At the former two states, the c-axis length of the monoclinic WO3 films was found to expand slightly compared with that of the latter state after annealing. These results were consistently explained in terms of the protonation and hydration of WO3.