Nanodomain growth in amorphous Si–C–N
Nanodomain growth in amorphous Si–C–N
复制标题
非晶 Si-C-N 中的纳米域生长
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
H. Schmidt
中科院分区：
文献类型：
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作者：
W. Gruber;O. Starykov;H. Schmidt
聚合物基非晶态Si-C-N陶瓷在热分解后被分解成非晶态的纳米区。这些纳米结构域有望对这些材料的超高温度稳定性具有至关重要的作用。我们用小角X射线散射研究了1400°C等温退火过程中纳米磁畴的生长。热分解样品的磁区半径约为5？，这是由Guinier图确定的。在退火过程中，在30 h内观察到高达9？的纳米磁畴的快速生长，而在长达165 h的较长时间内，纳米磁畴的生长明显减慢，导致磁畴尺寸为11？实验数据可以用基于扩散控制的电畴生长和结构弛豫导致的扩散减速的模型来拟合。(2019Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Polymer‐derived amorphous Si–C–N ceramics are phase separated into amorphous nanodomains after thermolysis. These nanodomains are expected to have a crucial importance for the extraordinary high temperature stability of these materials. We investigated nanodomain growth during isothermal annealing at 1400 °C using small angle X‐ray scattering. The as‐thermolyzed sample shows a domain radius of about 5 Å as determined from Guinier plots. During annealing, fast nanodomain growth up to 9 Å is observed for times up to 30 h while for longer annealing times up to 165 h the growth considerably slows down, resulting in a domain size of 11 Å. The experimental data can be fitted by a model based on diffusion controlled domain growth and simultaneous slow‐down of diffusion due to structural relaxation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)