Planar type electron emission device using atomic layered materials and it applications
Planar type electron emission device using atomic layered materials and it applications
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使用原子层状材料的平面型电子发射器件及其应用
DOI：
10.1109/ivnc52431.2021.9600789
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Nagao Masayoshi
中科院分区：
文献类型：
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作者：
Murakami Katsuhisa;Matsumoto Naoyuki;Kameda Yukino;Takao Yoshinori;Neo Yoichiro;Yamada Yoichi;Mitsuishi Kazutaka;Sasaki Masahiro;Mimura Hidenori;Nagao Masayoshi
利用石墨烯和六方氮化硼(h-BN)原子层状材料研制了平面型电子发射器件，以抑制器件结构中的非弹性电子散射。通过使用石墨烯抑制最顶层栅电极内的非弹性电子散射，获得了超过40%的高发射效率和超过100 mA/cm2的高发射电流密度。此外，利用石墨烯/h-BN异质结抑制了最顶层栅电极和绝缘层内的非弹性电子散射，实现了半高能散为0.18 eV的高度单色电子发射。这些结果将为平面型电子发射器件的几个实际应用提供依据。
The planar type electron emission devices using atomic layered materials of graphene and hexagonal boron nitride (h-BN) were developed to suppress inelastic electron scattering within the device structure. High emission efficiency of more than 40 % and high emission current density of more than 100 mA/cm2were achieved by the suppression of the inelastic electron scattering within the topmost gate electrode using graphene,. In addition, highly monochromatic electron emission with an energy spread of 0.18 eV in the full width at half maximum were realized by the suppression of the inelastic electron scattering within the topmost gate electrode and insulating layer using the graphene/h-BN heterostructure. These results would lead to several practical applications of planar type electron emission devices.