Ambipolar carrier transport in hetero-layered organic transistors consisting of quaterrylene and N, N'-dioctyl-3, 4, 9,10-perylenedicarboximide
Ambipolar carrier transport in hetero-layered organic transistors consisting of quaterrylene and N, N'-dioctyl-3, 4, 9,10-perylenedicarboximide
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由四萘嵌苯和 N,N-二辛基-3,4,9,10-苝二甲酰亚胺组成的异质层有机晶体管中的双极性载流子传输
DOI：
10.1016/j.orgel.2011.05.001
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发表时间：
2011
期刊：
影响因子：
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他
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作者：
Nobuya Hiroshiba;他
研究了N，N′-二辛基-3，4，9，10-二萘嵌苯二甲酰亚胺（PTCDI-C8）/四萘嵌苯（QT）异质分子层的晶体管特性。当表现为场效应晶体管（FET）时，清楚地观察到双极行为。场效应迁移率和阈值电压进行了评估，以获得洞察到载流子的注入和传输。计算得到的空穴和电子的载流子迁移率分别为3.6 × 10− 3和2.7 × 10− 2cm 2 V − 1 s −1。这些值与QT（p沟道）和PTCDI-C8层（n沟道）的相应FET行为相当，表明明确的异质分子界面是改善双极FET中载流子输运的重要因素。另一方面，在PTCDI-C8层中，观察到电子传输的阈值电压从5 V到61.6 V的显著偏移。我们得出结论，阈值电压的这种剧烈变化是由于在下面的QT层中存在空穴载流子。这一发现表明，根据底层的电子状态操纵阈值电压，而不干扰载流子输运的潜力。
We examined the transistor properties of an N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8)/quaterrylene (QT) heteromolecular layer, in which the highly ordered molecular layers were stacked on the monolayer level. Ambipolar behavior was clearly observed when behaving as a field effect transistor (FET). The field effect mobilities and threshold voltages were evaluated to gain an insight into the injection and transport of the carriers. The obtained carrier mobilities for holes and electrons were calculated to be 3.6 × 10−3and 2.7 × 10−2cm2V−1s−1, respectively. These values are comparable to those of the respective FET behaviors of QT (p-channel) and PTCDI-C8layers (n-channel), indicating that a well-defined heteromolecular interface is an essential factor for improving carrier transport in ambipolar FETs. On the other hand, in the PTCDI-C8layer, a marked shift from 5 to 61.6 V was observed in the threshold voltage for electron transport. We concluded this drastic change in threshold voltage to be due to the presence of hole carriers in the underlying QT layers. This finding demonstrates the potential to manipulate threshold voltage according to the electronic states of the underling layer without disturbing carrier transport.