Study of waveguide background at visible wavelengths for on-chip nanoscopy.

Study of waveguide background at visible wavelengths for on-chip nanoscopy.
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DOI:
10.1364/oe.420844
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发表时间:
2021-01
期刊:
影响因子:
3.8
通讯作者:
D. Coucheron;Ø. Helle;J. Wilkinson;G. S. Murugan;Carlos Dom'inguez;H. Angelskår;B. Ahluwalia
D. Coucheron;Ø. Helle;J. Wilkinson;G. S. Murugan;Carlos Dom'inguez;H. Angelskår;B. Ahluwalia
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
D. Coucheron;Ø. Helle;J. Wilkinson;G. S. Murugan;Carlos Dom'inguez;H. Angelskår;B. Ahluwalia

文献摘要

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片上超分辨光学显微镜是一个新兴的领域,依赖于波导激发与可见光。在这里,我们调查两个常用的高折射率波导平台,五氧化二钽(Ta 2 O 5)和氮化硅(Si 3 N4),相对于他们的背景与激发在488-640 nm的范围内。通过成像荧光珠来估计来自这些波导的背景强度。还测量了来自这些波导平台的背景的光谱依赖性。对于640 nm波长激发,两种材料都具有弱背景,但对于Si 3 N4,背景对于较短波长逐渐增加。进一步研究了波导背景对直接随机光学重构显微镜(dSTORM)单分子定位精度的影响。在488 nm处的Si 3 N4的背景的增加被示出为降低定位精度,从而降低重建图像的分辨率。两种材料在640 nm处的定位精度非常相似。因此,对于较短波长的应用,Ta 2 O 5是优选的。通过改进制造来减少较短波长下来自Si 3 N4的背景将是值得追求的。
On-chip super-resolution optical microscopy is an emerging field relying on waveguide excitation with visible light. Here, we investigate two commonly used high-refractive index waveguide platforms, tantalum pentoxide (Ta2O5) and silicon nitride (Si3N4), with respect to their background with excitation in the range 488-640 nm. The background strength from these waveguides were estimated by imaging fluorescent beads. The spectral dependence of the background from these waveguide platforms was also measured. For 640 nm wavelength excitation both the materials had a weak background, but the background increases progressively for shorter wavelengths for Si3N4. We further explored the effect of the waveguide background on localization precision of single molecule localization for direct stochastic optical reconstruction microscopy (dSTORM). An increase in background for Si3N4 at 488 nm is shown to reduce the localization precision and thus the resolution of the reconstructed images. The localization precision at 640nm was very similar for both the materials. Thus, for shorter wavelength applications Ta2O5 is preferable. Reducing the background from Si3N4 at shorter wavelengths via improved fabrication will be worth pursuing.