Population process of the upper subband in AlxGa1-xAs-GaAs quantum wells.
Population process of the upper subband in AlxGa1-xAs-GaAs quantum wells.
复制标题
AlxGa1-xAs-GaAs 量子阱中上子带的布居过程。
DOI：
10.1103/physrevb.39.12993
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
Ploog
中科院分区：
文献类型：
--
作者：
Ensslin;Heitmann;Gerhardts;Ploog
在低载流子密度下制备了AlxGa1GaAsxAsGaAsxAs-−特别定制的门控量子阱。磁电容-电压测量的详细研究清楚地表明，在上子带的布居阈值附近存在两个极小值，对应于下子带中的一个相同的填充因子。我们可以很好地解释这种独特的行为，通过模型化总的态密度，这是由两个被占据的子带的朗道能级相互作用产生的。
Specially tailored gated Al x Ga 1− x As-GaAs quantum wells have been prepared where the occupation of the upper subband occurs at low carrier densities. A detailed investigation by magneto-capacitance versus voltage measurements clearly reveals that in the vicinity of the population threshold of the upper subband there exist two minima corresponding to one and the same filling factor in the lower subband. We can nicely explain this unique behavior by modeling the total density of states which results from an interplay of Landau levels of both occupied subbands.