Analysis and Design of a 1.6-28-GHz Compact Wideband LNA in 90-nm CMOS Using a π-Match Input Network
Analysis and Design of a 1.6-28-GHz Compact Wideband LNA in 90-nm CMOS Using a π-Match Input Network
复制标题
DOI：
10.1109/tmtt.2010.2052406
复制
发表时间：
2010-08-01
影响因子：
4.3
通讯作者：
Lu, Shey-Shi
中科院分区：
文献类型：
--
作者：
Chen, Hsien-Ku;Lin, Yo-Sheng;Lu, Shey-Shi
提出了一种基于级联码电阻反馈结构的宽带低噪声放大器。宽带输入阻抗匹配是通过并联反馈电阻与前置pi匹配网络相结合来实现的，而宽带增益响应则是通过后级联电感（L-P）来实现的，该电感插入级联晶体管的输出和并联电阻反馈网络的输入之间，以提高增益并抑制噪声。理论分析表明，功率增益的频率响应和噪声系数（NF）可以用二阶函数来描述，以质量因子或阻尼比为参数。采用90纳米CMOS技术实现，该宽带LNA的芯片面积仅为0.139 mm(2)，包括测试垫。在1.6- 28ghz频段，其功耗为21.6 mw， S-11低于-10 dB， S-22低于-10 dB， S-21平坦为9.6 +/- 1.1 dB， NF平坦为3.68 +/- 0.72 dB。此外，还实现了4 dBm的优良输入三阶互调点。分析、模拟和测量结果是相互一致的。
This paper presents a wideband low-noise amplifier (LNA) based on the cascode configuration with resistive feedback. Wideband input-impedance matching was achieved using a shunt-shunt feedback resistor in conjunction with a preceding pi-match network, while the wideband gain response was obtained using a post-cascode inductor (L-P), which was inserted between the output of the cascoding transistor and the input of the shunt-shunt resistive feedback network to enhance the gain and suppress noise. Theoretical analysis shows that the frequency response of the power gain, as well as the noise figure (NF), can be described by second-order functions with quality factors or damping ratios as parameters. Implemented in 90-nm CMOS technology, the die area of this wideband LNA is only 0.139 mm(2) including testing pads. It dissipates 21.6-mW power and achieves S-11 below -10 dB, S-22 below -10 dB, flat S-21 of 9.6 +/- 1.1 dB, and flat NF of 3.68 +/- 0.72 dB over the 1.6-28-GHz band. Besides, excellent input third-order inter-modulation point of 4 dBm is also achieved. The analytical, simulated, and measured results are mutually consistent.