Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
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DOI：
10.1063/1.4991879
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发表时间：
2017-08-28
影响因子：
4
通讯作者：
Chalker, P. R.
中科院分区：
文献类型：
--
作者：
Sedghi, N.;Li, H.;Chalker, P. R.
研究了氟掺杂对Ta2O5阻变存储器件开关稳定性的影响。结果表明，掺杂剂由于中和了氧空位而起到了增大存储窗口和提高电阻态稳定性的作用。改变低电阻状态下的电流的能力与设置电流顺应性结合大的存储器窗口使得多级单元切换更有利。器件的置位和复位电压为
The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the neutralization of oxygen vacancies. The ability to alter the current in the low resistance state with set current compliance coupled with large memory window makes multilevel cell switching more favorable. The devices have set and reset voltages of