Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
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DOI：
10.1063/1.1357832
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发表时间：
2001-06-01
影响因子：
3.2
通讯作者：
Tanaka, M
中科院分区：
文献类型：
--
作者：
Higo, Y;Shimizu, H;Tanaka, M
我们在 Ga1-xMnxAs/AlAs/Ga1-xMnxAs 铁磁半导体隧道结中观察到非常大的隧道磁阻 (TMR)。当沿薄膜平面中的 [100] 轴施加磁场时，在具有薄 (1.5 nm) AlAs 隧道势垒的结中获得了高达 75% 的 TMR 比。当施加的磁场方向沿[1(1) over bar $0] 和[110] 时，TMR 比率降低。这种各向异性 TMR 被发现可以通过假设易轴为 [100] 的立方磁各向异性的单畴理论来解释，这是由闪锌矿型 Ga1-xMnxAs 晶体结构引起的。 (C) 2001 年美国物理研究所。
We have observed very large tunneling magnetoresistance (TMR) in Ga1-xMnxAs/AlAs/Ga1-xMnxAs ferromagnetic semiconductor tunnel junctions. A TMR ratio as high as 75% was obtained in a junction with a thin (1.5 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR ratio decreased when the applied magnetic field direction was along the [1(1) over bar $0] and [110]. This anisotropic TMR was found to be explained by the single-domain theory assuming cubic magnetic anisotropy with the easy axis of [100], which is induced by the zincblende-type Ga1-xMnxAs crystal structure. (C) 2001 American Institute of Physics.