Improvement of ZnO thin film properties by application of ZnO buffer layers
Improvement of ZnO thin film properties by application of ZnO buffer layers
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DOI：
10.1016/j.jcrysgro.2007.06.034
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发表时间：
2007-10-01
影响因子：
1.8
通讯作者：
Yakimova, Rositza
中科院分区：
文献类型：
--
作者：
Khranovskyy, Volodymyr;Minikayev, Roman;Yakimova, Rositza
报道了不同温度下制备的 ZnO 缓冲层对 ZnO 主层的结构、光学和形貌特性的影响。通过 PEMOCVD 将 ZnO 薄膜（包括缓冲层和主层）沉积在 (0 0 0 1) c 蓝宝石衬底上。采用两步生长方式在 ZnO 缓冲层上实现同质外延生长：低温 ZnO 缓冲层在 T-s = 300 摄氏度下沉积，主层在 T-s = 500 摄氏度下沉积；高温 ZnO 缓冲层在 T-s = 500 摄氏度下沉积，主层在 T-s = 300 摄氏度下沉积。为了进行比较，在高温 T, = 500'C 下一步生长样品使用了程序。低温缓冲层对结构和形态特性表现出最有益的影响，表现为(0 0 2)衍射峰变窄（FWHM = 0.07度）和微晶尺寸增大。然而，该样品的表面粗糙度高于一步法生长的样品的表面粗糙度，这需要进一步考虑。光致发光结果似乎支持这样的结论：在所研究的温度范围内应用低温缓冲层是最有利的。 (C) 2007 Elsevier B.V. 保留所有权利。
The effect of ZnO buffer layers prepared at different temperatures on the structural, optical and morphological properties of the ZnO main layer is reported. ZnO thin films (comprising a buffer and a main layer) were deposited on (0 0 0 1) c-sapphire substrates by PEMOCVD. Two-step growth regimes were applied to realize a homoepitaxial growth on ZnO buffers: low-temperature ZnO buffer layer deposited at T-s = 300 degrees C and the main layer at T-s = 500 degrees C high-temperature ZnO buffer layer deposited at T-s = 500 degrees C and the main layer at T-s = 300 degrees C. For comparison, a sample grown at high -temperature T, = 500'C by one-step procedure was used. The lowtemperature buffer layer has shown the most beneficial effect on the structural and morphological properties, as expressed by the narrowing of the (0 0 2) diffraction peak (FWHM = 0.07 degrees) and crystallite size enlargement. However, the surface roughness of this sample is higher then that of the sample grown by one-step procedure and this needs further considerations. The photoluminescence results seem to support a conclusion that the application of a low-temperature buffer layer arriong the studied temperature regimes is the most advantageous. (C) 2007 Elsevier B.V. All rights reserved.