Composition dependence of energy structure and lattice structure in InGaAs/GaP
Composition dependence of energy structure and lattice structure in InGaAs/GaP
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DOI：
10.1016/j.physe.2003.02.001
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发表时间：
2004-02-01
影响因子：
3.3
通讯作者：
Takeda, Y
中科院分区：
文献类型：
--
作者：
Fuchi, S;Nonogaki, Y;Takeda, Y
计算了GaP/InGaAs/GaP单量子阱威尔斯的能级结构。计算的能量结构表明，InGaAs阱层具有间接的能量结构在较低的铟成分范围内。通过光致发光测量，在低铟组分范围和高铟组分范围之间观察到发光光谱的差异。透射电子显微镜观察的结果表明，良好的晶体质量的InGaAs层结构，在较低的铟成分范围内制造。另一方面，在更高的铟组成范围内，纳米级的点的形成和位错的产生被证实。(C)2003 Elsevier B. V.保留所有权利。
We have calculated the energy structure of GaP/InGaAs/GaP single quantum wells. Calculated energy structures show that the InGaAs well layer has the indirect energy structure in the lower indium composition range. By the photoluminescence measurements, differences of luminescence spectra were observed between the lower indium composition range and the higher indium composition range. Results of transmission electron microscopy observations revealed that good crystal-quality InGaAs layer structures were fabricated in the lower indium composition range. On the other hand, in the higher indium composition range, nanometer-scale dot formation and generation of dislocations were confirmed. (C) 2003 Elsevier B.V. All rights reserved.