Depth-Dependent Structural Changes in PS-b-P2VP Thin Films Induced by Annealing
Depth-Dependent Structural Changes in PS-b-P2VP Thin Films Induced by Annealing
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DOI：
10.1021/ma500642d
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发表时间：
2014-08
期刊：
影响因子：
5.5
通讯作者：
J. Wernecke;H. Okuda;H. Ogawa;F. Siewert;M. Krumrey
中科院分区：
文献类型：
--
作者：
J. Wernecke;H. Okuda;H. Ogawa;F. Siewert;M. Krumrey
在硅 K 边缘处进行具有散射对比度匹配的 GISAXS 测量，以获得有关硅基板上的初旋和退火 PS-b-P2VP 薄膜的结构变化的深度分辨信息。对初纺薄膜的深度敏感 GISAXS 测量显示，整个薄膜具有垂直方向的指纹状层状结构，微相分离距离为 59 nm。退火后的薄膜显示出表面至约 30 nm 深度的有序性显着降低，而朝向衬底界面的有序性得以保留。同时，在 105°C 退火 2 小时后，没有观察到向水平有序的显着转变。我们得出的结论是，从垂直有序到水平有序的转变过程在退火时间之后是不完整的，并且在室温下保持冻结状态。此外，转变开始于薄膜顶部无序性的增加，这表明表面聚结微域的迁移率较高。
GISAXS measurements with scattering contrast matching at the silicon K-edge were performed to obtain depth-resolved information on structural changes in as-spun and annealed PS-b-P2VP thin films on silicon substrate. Depth-sensitive GISAXS measurements of the as-spun film revealed a vertically oriented fingerprint-like lamellar structure with a microphase separation distance of 59 nm throughout the entire film. The annealed film showed a significantly reduced ordering at the surface to a depth of about 30 nm, while the order is preserved toward the substrate interface. At the same time, no significant transition to horizontal ordering was observed after 2 h of annealing at 105 °C. We conclude that the transition process from vertical to horizontal ordering is incomplete after the annealing time and remains in a frozen state at room temperature. Moreover, the transition starts as a disorder increase at the top of the film, which indicates a higher mobility of the coalescing microdomains at the surface.