Pressure induced crystallization in amorphous silicon
Pressure induced crystallization in amorphous silicon
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非晶硅中的压力诱导结晶
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
S. Sikka
中科院分区：
文献类型：
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作者：
K. Pandey;N. Garg;K. V. Shanavas;Surinder M. Sharma;S. Sikka
我们用X射线衍射和拉曼散射技术研究了非晶硅的高压行为。我们的实验表明，a-Si经历了从低密度非晶到高密度非晶相的多晶转变，然后通过压力诱导晶化到原始六方（ph）相。在释放路径上，所观察到的相变的顺序取决于压力是缓慢地还是快速地降低。利用我们的第一性原理计算的结果，压力诱导优先结晶的ph相解释在一个热力学模型的基础上的现象随机成核和生长过程。
We have investigated the high pressure behavior of amorphous silicon (a-Si) using x-ray diffraction and Raman scattering techniques. Our experiments show that a-Si undergoes a polyamorphous transition from the low density amorphous to the high density amorphous phase, followed by pressure induced crystallization to the primitive hexagonal (ph) phase. On the release path, the sequence of observed phase transitions depends on whether the pressure is reduced slowly or rapidly. Using the results of our first principles calculations, pressure induced preferential crystallization to the ph phase is explained in terms of a thermodynamic model based on phenomenological random nucleation and the growth process.