Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold
Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold
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DOI：
10.1116/1.3167372
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发表时间：
2009-07
影响因子：
1.4
通讯作者：
Zhe Wang;Xinhong Yu;Rubo Xing;Yanchun Han;A. Takahara
中科院分区：
文献类型：
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作者：
Zhe Wang;Xinhong Yu;Rubo Xing;Yanchun Han;A. Takahara
提出了一种用于有机电子领域应用的聚合物半导体图案化的简单而有效的方法。除所需图案外，整个聚合物层通过具有浮雕图案的环氧树脂模具选择性地从平坦的聚（二甲基硅氧烷）（PDMS）印模表面剥离。这是有利的，因为在压力下图案化印模的突起周围的PDMS印模的弹性变形可以辅助聚合物膜沿着图案边缘的塑性变形，产生大面积和高质量的图案，并且PDMS表面具有低表面能，这使得可以容易地去除聚合物膜。
A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.