Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals
Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals
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DOI:
10.1364/oe.16.015932
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发表时间:
2008-09-29
期刊:
影响因子:
3.8
通讯作者:
Huber, G.
中科院分区:
文献类型:
--
作者:
Cornacchia, F.;Di Lieto, A.;Huber, G.
In the present work we report on the growth, spectroscopy and laser results of diode pumped Pr-doped LiYF(4), LiLuF(4) and LiGdF(4) fluoride, scheelite-type structure crystals. We measured the polarisation dependent absorption and emission properties as well as the decay time of the (3)P(0) level. Exploiting the (3)P(2) absorption around 444 nm, we obtained efficient laser emission under GaN laser diode pumping on several transitions from the green to the near infrared wavelength range. (C) 2008 Optical Society of America