Direct Growth of Patterned Ge on Insulators Using Graphene
Direct Growth of Patterned Ge on Insulators Using Graphene
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DOI：
10.1021/acs.jpcc.1c03567
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发表时间：
2021-06
期刊：
影响因子：
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通讯作者：
T. Tsukamoto;N. Hirose;A. Kasamatsu;T. Matsui;Y. Suda
中科院分区：
文献类型：
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作者：
T. Tsukamoto;N. Hirose;A. Kasamatsu;T. Matsui;Y. Suda
石墨烯片在具有 300 nm 厚 SiO2 层的 Si 基板上形成。石墨烯片部分覆盖了 SiO2 表面。通过溅射将Ge沉积在表面上。用拉曼光谱和原子力显微镜对制造的样品进行了评估。我们发现，当沉积过程中基底温度为 450 °C 或更高时，Ge 会选择性地在石墨烯表面形成。拉曼光谱结果表明沉积后石墨烯片中引入了sp3缺陷。由于 sp3 缺陷具有高反应性，此类缺陷可能是石墨烯片上选择性吸附 Ge 的重要因素。选择性沉积需要超过450°C的生长温度，这表明沉积过程中Ge吸附原子在绝缘表面上的表面扩散也很重要。 Ge在石墨烯片上的选择性沉积被认为是由于石墨烯片中引入sp3缺陷以及Ge吸附原子在SiO2表面上的表面扩散。这种绝缘体上的直接图案化技术可用于可通过溅射沉积的各种材料。
Graphene sheets were formed on a Si substrate with a 300-nm-thick SiO2layer. The graphene sheets partially covered the SiO2surface. Ge was deposited on the surface by sputtering. The fabricated samples were evaluated with Raman spectroscopy and atomic force microscopy. We found that Ge was formed on the graphene surface selectively when the substrate temperature was 450 °C or higher during the deposition. The results of the Raman spectroscopy indicated that sp3defects were introduced into the graphene sheets after the deposition. Such defects can be an important factor in the selective adsorption of Ge on graphene sheets because sp3defects are highly reactive. A growth temperature of more than 450 °C was needed for the selective deposition, indicating that the surface diffusion of the Ge adatoms on the insulating surface during the deposition is also important. The selective deposition of Ge on the graphene sheets is considered to be due to the sp3defects introduced into the graphene sheets and surface diffusion of the Ge adatoms on the SiO2surface. This direct-patterning technique on insulators can be utilized for various materials that can be deposited by sputtering.