GaN diffractive microlenses fabricated with gray-level mask
GaN diffractive microlenses fabricated with gray-level mask
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DOI：
10.1016/s0030-4018(02)02198-3
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发表时间：
2003
影响因子：
2.4
通讯作者：
Chii-Chang Chen;Ming Li;Chih-Yang Chang;J. Sheu;G. Chi;W. Cheng;J. Yeh;Jenq-Yang Chang;Toshiaki Ito
中科院分区：
文献类型：
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作者：
Chii-Chang Chen;Ming Li;Chih-Yang Chang;J. Sheu;G. Chi;W. Cheng;J. Yeh;Jenq-Yang Chang;Toshiaki Ito
首次采用灰度掩模在GaN基材料中制备了平凸衍射微透镜。利用电感耦合等离子体刻蚀技术将光刻胶上的灰度级衍射微透镜的表面浮雕转移到GaN上。微透镜用在405 nm处发射的蓝色激光二极管表征。GaN衍射微透镜的焦距为14.5厘米。GaN微透镜可用于蓝-紫-紫外区的微光学系统的应用，如高密度光学数据存储。讨论了用灰度掩模在GaN中实现高数值孔径衍射微透镜的可能性。
Plano-convex diffractive microlenses were fabricated in GaN-based materials with a gray-level mask for the first time. The surface relief of the gray-level diffractive microlens on photoresist was transferred onto GaN by inductively coupled plasma etching technique. The microlenses were characterized with a blue laser diode emitting at 405 nm. The focal length of the GaN diffractive microlens is 14.5 cm. The GaN microlenses can be used for the applications of the micro-optics systems in blue-violet-UV regions such as high-density optical data storage. The potential of the realization of the high-numerical-aperture diffractive microlens in GaN with gray-level mask is discussed.