Fluorosurfactant-assisted photolithography for patterning of perfluoropolymers and solution-processed organic semiconductors for printed displays
Fluorosurfactant-assisted photolithography for patterning of perfluoropolymers and solution-processed organic semiconductors for printed displays
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DOI：
10.7567/apex.7.101602
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发表时间：
2014-09
影响因子：
2.3
通讯作者：
T. Sakanoue;M. Mizukami;S. Oku;Yudai Yoshimura;Miho Abiko;S. Tokito
中科院分区：
文献类型：
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作者：
T. Sakanoue;M. Mizukami;S. Oku;Yudai Yoshimura;Miho Abiko;S. Tokito
开发了一种全氟聚合物光刻图案化技术，用于溶液处理有机半导体的微图案化。我们发现光刻胶溶液中的少量含氟表面活性剂添加剂甚至可以在全氟聚合物的反润湿表面上制备旋涂膜。随后的光刻和干/湿蚀刻实现了全氟聚合物的优异图案化，这在基材上提供了微观尺度润湿性的高对比度。去湿图案用于通过选择性去湿来隔离 100 ppi 有源矩阵显示器的溶液处理有机薄膜晶体管阵列。半导体层的隔离显着改善了电流开/关比，迁移率高达 >1 cm2 V−1 s−1。
A photolithographic patterning technique of perfluoropolymers was developed for the micropatterning of solution-processed organic semiconductors. We found that a small amount of fluorosurfactant additives in photoresist solutions enabled preparation of the spin-coated films even on the dewetting surfaces of perfluoropolymers. Subsequent photolithography and dry/wet etching achieved excellent patterning of perfluoropolymers, which provided a high contrast of wettability in microscale on the substrate. The dewetting patterns were applied for isolating solution-processed organic thin-film transistor arrays for a 100 ppi active-matrix display by selective dewetting. The isolation of the semiconducting layers achieved significant improvement in the current on/off ratio with a high mobility of >1 cm2 V−1 s−1.