Evidence for strong magnon contribution to the TMR temperature dependence in MgO based tunnel junctions
Evidence for strong magnon contribution to the TMR temperature dependence in MgO based tunnel junctions
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DOI：
10.1103/physrevb.77.014440
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发表时间：
2008-01
影响因子：
3.7
通讯作者：
V. Drewello;J. Schmalhorst;Andy Thomas;G. Reiss
中科院分区：
文献类型：
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作者：
V. Drewello;J. Schmalhorst;Andy Thomas;G. Reiss
我们已经制备了MgO基磁性隧道结，其隧道磁电阻（TMR）比在室温下高达143%，在12 K下高达205%。这种TMR温度依赖性主要是由反平行磁状态下的强温度依赖性引起的，而平行状态下的电导变化很小。我们发现，一个修改后的版本的磁振子激发模型可以适用于这些MgO磁性隧道结。如果包括隧穿电子能量的热拖尾，则可以拟合温度依赖性。我们将展示我们的数据的结果，我们也成功地测试了我们的模型从其他出版物的数据。
We have prepared MgO based magnetic tunnel junctions which show up to 143% tunneling magnetoresistance (TMR) ratio at room temperature and 205% at 12 K. This TMR temperature dependence is mainly caused by a strong temperature dependence in the antiparallel magnetic state, while in the parallel state the change of condunctance is small. We found that a modified version of the magnon excitation model may be applied to these MgO magnetic tunnel junctions. If the thermal smearing of the tunneling electron's energy is included it is possible to fit the temperature dependence. We will show the results for our data and we have also tested our model successfully on data from other publications.