Detailed structure of the H-N-H center in GaAs y N 1 − y revealed by vibrational spectroscopy under uniaxial stress
Detailed structure of the H-N-H center in GaAs y N 1 − y revealed by vibrational spectroscopy under uniaxial stress
复制标题
单轴应力下振动光谱揭示 GaAs y N 1 − y 中 H-N-H 中心的详细结构
DOI：
10.1103/physrevb.81.233201
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发表时间：
2010
影响因子：
3.7
通讯作者：
F. Martelli
中科院分区：
文献类型：
--
作者：
L. Wen;F. Bekisli;M. Stavola;W. Fowler;R. Trotta;A. Polimeni;M. Capizzi;S. Rubini;F. Martelli
The H-N-H center in ${\text{GaAs}}_{1\ensuremath{-}y}{\text{N}}_{y}$ that is responsible for the band-gap shift caused by H has been studied by infrared spectroscopy in conjunction with uniaxial stress and by theory. Rich, microscopic details about its canted structure are obtained. The splitting of the infrared lines confirms the ${\text{C}}_{1\text{h}}$ symmetry of the defect and yields a quantitative value for the canting angle of the center. The reorientation barrier of the defect is estimated from stress-induced reorientation at temperatures near 30 K to be 96 meV.
The H-N-H center in ${\text{GaAs}}_{1\ensuremath{-}y}{\text{N}}_{y}$ that is responsible for the band-gap shift caused by H has been studied by infrared spectroscopy in conjunction with uniaxial stress and by theory. Rich, microscopic details about its canted structure are obtained. The splitting of the infrared lines confirms the ${\text{C}}_{1\text{h}}$ symmetry of the defect and yields a quantitative value for the canting angle of the center. The reorientation barrier of the defect is estimated from stress-induced reorientation at temperatures near 30 K to be 96 meV.