Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors
Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors
复制标题
压电效应调制柔性 AlGaN/GaN 高电子迁移率晶体管
DOI：
10.1021/acsnano.9b05999
复制
发表时间：
2019-11-01
期刊：
影响因子：
17.1
通讯作者：
Wang, Zhong Lin
中科院分区：
文献类型：
--
作者：
Zhu, Jiyuan;Zhou, Xingyu;Wang, Zhong Lin
Flexible electronic technology has attracted great attention due to its wide range of potential applications in the fields of healthcare, robotics, and artificial intelligence, etc. In this work, we have successfully fabricated flexible AlGaN/GaN high-electron-mobility transistors (HEMTs) arrays through a low-damage and wafer-scale substrate transfer technology from a rigid Si substrate. The flexible AlGaN/GaN HEMTs have excellent electrical performances with the I-d,I-max achieving 290 mA/mm at V-gs = +2 V and the g(m,max) reaching to 40 mS/mm. The piezotronic effect provides a different freedom to optimize device performances, and flexible HEMTs can endure the larger mechanical distortions. Based on the piezotronic effect, we applied an external stress to significantly modulate the electrical performances of flexible HEMTs. The piezotronic effect modulated flexible AlGaN/GaN HEMTs exhibit great potential in human-machine interface, intelligent microinductor systems, and active sensors, etc, and introduce an opportunity to sensing or feedback external mechanical stimuli and so on.
