Adaptive Self Refresh Scheme for Battery Operated High-Density Mobile DRAM Applications
Adaptive Self Refresh Scheme for Battery Operated High-Density Mobile DRAM Applications
复制标题
适用于电池供电的高密度移动 DRAM 应用的自适应自刷新方案
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
Yong Kim
中科院分区：
文献类型：
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作者：
Jin;B. Jeong;Saeng;Shin;Sung;Hanjun Lee;Min;Sang;Sung;Jun;Bong;Jae;P. Moran;Yong Kim
由于单元晶体管尺寸的减小对电容器充电的均匀性具有负面影响，因此现代DRAM中的自刷新电流变得越来越难以处理。为了解决这个问题，自适应自刷新（ASR）方案已被开发。在ASR方案中执行基于双周期的刷新以使用行寄存器信息来降低功耗。根据单元数据保持特性自适应地修改行寄存器信息。当DRAM进入自刷新模式时，仅使用内部刷新测试电路测试被激活用于写入的行。测试结果用于选择双周期基极自刷新操作的合适周期。本文演示了512 M移动的SDRAM利用这种自适应自刷新（ASR）能力，以最大限度地减少待机功率为150 uA@85 degC，同时保持芯片面积的传统方案，使用相同的工艺技术。
Self refresh current in modern DRAMs is becoming more difficult problem to handle because the decreasing cell transistor size has a negative effect on the uniformity of capacitor charge. In order to solve this issue, adaptive self refresh(ASR) scheme has been developed. A dual period based refresh is performed in the ASR scheme to reduce power dissipation using row register information. The row register information is adaptively modified according to the cell data retention characteristics. When DRAM enters self refresh mode, only the rows which were activated for write are tested using internal refresh test circuits. The test results are used to choose the appropriate period for the dual period base self refresh operation. This paper demonstrates 512M mobile SDRAM utilizing this adaptive self refresh(ASR) capability to minimize standby power to 150 uA @85degC while maintaining chip area of the conventional scheme using the same process technology.